The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Dec. 15, 2005
Joseph C. Olson, Beverly, MA (US);
Jonathan Gerald England, Horsham, GB;
Morgan D. Evans, Manchester, MA (US);
Douglas Thomas Fielder, Peabody, MA (US);
Gregg Alexander Norris, Rockport, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Damian Brennan, Gloucester, MA (US);
William Gray Callahan, Rockport, MA (US);
Joseph C. Olson, Beverly, MA (US);
Jonathan Gerald England, Horsham, GB;
Morgan D. Evans, Manchester, MA (US);
Douglas Thomas Fielder, Peabody, MA (US);
Gregg Alexander Norris, Rockport, MA (US);
Shengwu Chang, South Hamilton, MA (US);
Damian Brennan, Gloucester, MA (US);
William Gray Callahan, Rockport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A technique for uniformity tuning in an ion implanter system is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam uniformity tuning. The method may comprise generating an ion beam in an ion implanter system. The method may also comprise tuning one or more beam-line elements in the ion implanter system to reduce changes in a beam spot of the ion beam when the ion beam is scanned along a beam path. The method may further comprise adjusting a velocity profile for scanning the ion beam along the beam path such that the ion beam produces a substantially uniform ion beam profile along the beam path.