The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Sep. 02, 2005
Chao-hsi Chung, Hsinchu County, TW;
Chu-chun HU, Hsinchu County, TW;
Chih-cheng Wang, Kaohsiung County, TW;
Chao-Hsi Chung, Hsinchu County, TW;
Chu-Chun Hu, Hsinchu County, TW;
Chih-Cheng Wang, Kaohsiung County, TW;
ProMOS Technologies Inc., Hsinchu, TW;
Abstract
A fabrication method for a semiconductor device is provided. A substrate has an array area with a first gate and a peripheral area with a second gate. First and second isolation layers made of different materials are sequentially formed to cover the first gate, the second gate and the substrate. A portion of the second isolation layer is removed to form spacers on sidewalls of the first and second gates and expose the first isolation layer on a top of the first gate, a top of the second gate, and a surface of the substrate. The spacers on the first isolation layer in the array area are removed. The first isolation layer on the top of the first gate and the surface of the substrate is removed, thereby leaving a portion of the first isolation layer covering on the sidewalls of the first gate.