The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2008
Filed:
Dec. 27, 2005
Fwu-iuan Hshieh, Saratoga, CA (US);
Brian D. Pratt, San Jose, CA (US);
Fwu-Iuan Hshieh, Saratoga, CA (US);
Brian D. Pratt, San Jose, CA (US);
Third Dimension (3D) Semiconductor, Inc., Tempe, AZ (US);
Abstract
A method of manufacturing a semiconductor device having an active region and a termination region includes providing a semiconductor substrate having first and second main surfaces opposite to each other. The semiconductor substrate has an active region and a termination region surrounding the active region. The first main surface is oxidized. A first plurality of trenches and a first plurality of mesas are formed in the termination region. The first plurality of trenches in the termination region are filled with a dielectric material. A second plurality of trenches are formed in the termination region. The trenches of the second plurality of trenches are filled with the dielectric material.