The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Jun. 27, 2005
Applicants:
Alex Kabansky, Santa Clara, CA (US);
Hean-cheal Lee, Pleasanton, CA (US);
Sundar Narayanan, Santa Clara, CA (US);
Prabhuram Gopalan, Milpitas, CA (US);
Vinay Krishna, Apple Valley, MN (US);
Inventors:
Alex Kabansky, Santa Clara, CA (US);
Hean-Cheal Lee, Pleasanton, CA (US);
Sundar Narayanan, Santa Clara, CA (US);
Prabhuram Gopalan, Milpitas, CA (US);
Vinay Krishna, Apple Valley, MN (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.