The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Dec. 18, 2001
Cyrus E. Tabery, Cupertino, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Bin Yu, Cupertino, CA (US);
Qi Xiang, San Jose, CA (US);
Robert B. Ogle, San Jose, CA (US);
Cyrus E. Tabery, Cupertino, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Bin Yu, Cupertino, CA (US);
Qi Xiang, San Jose, CA (US);
Robert B. Ogle, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, implanting dopants into the substrate and activating the dopants using laser thermal annealing. During annealing, the laser and substrate are moved relative to one another, and the movement of the laser and the substrate relative to one another does not pause between and during activating one portion of the source/drain regions and activating another portion of the source/drain regions. Each pulse from the laser can respectively irradiate different portions of the source/drain regions, and a spot area of the laser is less than 50 millimeter.