The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2008
Filed:
Dec. 27, 2004
Jihperng Leu, Portland, OR (US);
Jun He, Portland, OR (US);
Jihperng Leu, Portland, OR (US);
Jun He, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to form a compressive strained surface. The compressive strain may be induced using an ion implantation process that bombards the dielectric film with ions that become implanted in the top surface of the dielectric film. The damage caused during ion implantation, as well as the implanted ions themselves, causes an expansion of the top surface which induces a biaxial compressive residual stress, thereby forming a compressive strained surface. The compressive strain reduces the amount of surface flaws present on the top surface, thereby improving the toughness of the dielectric film. In addition, the ion implantation process may modify the plasticity of the top surface and reduce the likelihood of fracture mechanisms based on dislocation pileup for crack initiation.