The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Sep. 27, 2006
Chang-sup Mun, Suwon, KR;
Woo-gwan Shim, Yongin, KR;
Han-ku Cho, SeongNam, KR;
Chang-ki Hong, SeongNam, KR;
Doo-won Kwon, SeongNam, KR;
Chang-Sup Mun, Suwon, KR;
Woo-Gwan Shim, Yongin, KR;
Han-Ku Cho, SeongNam, KR;
Chang-Ki Hong, SeongNam, KR;
Doo-Won Kwon, SeongNam, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substrate on which a silicon layer and a silicon germanium layer are formed and exposed; and performing a first cleaning sub-process that uses a first cleaning solution to remove a native oxide layer from the semiconductor substrate. The cleaning method further comprises performing a second cleaning sub-process on the semiconductor substrate after performing the first cleaning sub-process, wherein the second cleaning sub-process comprises using a second cleaning solution. In addition, the second cleaning solution comprises ammonium hydroxide (NHOH), hydrogen peroxide (HO), and deionized water (HO), and the second cleaning solution comprises at least 200 times more deionized water (HO) than ammonium hydroxide (NHOH) by volume.