The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2008
Filed:
Jun. 22, 2005
Chi-i Lang, Sunnyvale, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Ratsamee Limdulpaiboon, Daly City, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Chi-I Lang, Sunnyvale, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Ratsamee Limdulpaiboon, Daly City, CA (US);
Judy H. Huang, Los Gatos, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Plasma etch processes incorporating helium-based etch chemistries can remove dielectric a semiconductor applications. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate helium as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.