The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2008

Filed:

May. 12, 2006
Applicants:

Tae-moon Jeong, Yongin, KR;

Seong-hyuck Kim, Seoul, KR;

Seong-woon Choi, Suwon, KR;

Inventors:

Tae-moon Jeong, Yongin, KR;

Seong-hyuck Kim, Seoul, KR;

Seong-woon Choi, Suwon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 9/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a photomask, a method for manufacturing the photomask and a method for measuring optical characteristics of a wafer exposure system, the measuring method using the photomask during manufacture. The photomask includes a substrate and a measuring pattern including a light opaque region pattern formed on the substrate and a plurality of light transmitting region patterns that are formed in regions divided by the light opaque region pattern and provoke phase shifts to provide phase differences to light transmitted through light transmitting regions. Precise measurements of the degree of a focus and lens aberrations of an exposure system using the photomask are obtained.


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