The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Oct. 04, 2004
Tingkai LI, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Mark A. Burgholzer, Amboy, WA (US);
Ray A. Hill, Vancouver, WA (US);
Tingkai Li, Vancouver, WA (US);
Sheng Teng Hsu, Camas, WA (US);
Bruce D. Ulrich, Beaverton, OR (US);
Mark A. Burgholzer, Amboy, WA (US);
Ray A. Hill, Vancouver, WA (US);
Sharp Laboratories of America, Inc., Camas, WA (US);
Abstract
A dry etch process is described for selectively etching silicon nitride from conductive oxide material for use in a semiconductor fabrication process. Adding an oxidant in the etch gas mixture could increase the etch rate for the silicon nitride while reducing the etch rate for the conductive oxide, resulting in improving etch selectivity. The disclosed selective etch process is well suited for ferroelectric memory device fabrication using conductive oxide/ferroelectric interface having silicon nitride as the encapsulated material for the ferroelectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile