The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2008
Filed:
Dec. 27, 2004
Applicants:
M. Reaz Shaheed, Portland, OR (US);
Thomas Hoffmann, Hillsboro, OR (US);
Mark Armstrong, Portland, OR (US);
Christopher P. Auth, Portland, OR (US);
Inventors:
M. Reaz Shaheed, Portland, OR (US);
Thomas Hoffmann, Hillsboro, OR (US);
Mark Armstrong, Portland, OR (US);
Christopher P. Auth, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract
An intentional recess or indentation is created in a region of semiconductor material that will become part of a channel of a metal oxide semiconductor (MOS) transistor structure. A layer is created on a surface of the recess to induce an appropriate type of stress in the channel.