The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Mar. 17, 2006
Yun-ren Wang, Tainan, TW;
Ying-wei Yen, Tongsiao Township, Miaoli County, TW;
Tony E T Liu, Toufen Chen, TW;
Yun-Ren Wang, Tainan, TW;
Ying-Wei Yen, Tongsiao Township, Miaoli County, TW;
Tony E T Liu, Toufen Chen, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of manufacturing a metal-oxide-semiconductor transistor is provided. A substrate having a gate structure thereon is provided. A source/drain extension region is formed in the substrate on each side of the gate structure. Thereafter, a carbon-containing material layer is formed over the substrate and then the carbon-containing material layer is etched back to form spacers on the sidewalls of the gate structure. Finally, a source/drain region is formed in the substrate on each side of the spacer-coated gate structure.