The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 26, 2008

Filed:

Feb. 16, 2004
Applicants:

Yusuke Takano, Kakegawa, JP;

Sung-eun Hong, Kakegawa, JP;

Inventors:

Yusuke Takano, Kakegawa, JP;

Sung-Eun Hong, Kakegawa, JP;

Assignee:

AZ Electronic Materials USA Corp., Somerville, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A water-soluble resin composition of the present invention comprises at least a water-soluble resin, an acid generator capable of generating an acid by heating and a solvent containing water. The water-soluble resin composition is applied on a highly water-repellant resist patternformed by a resist such as an ArF-responsive radiation sensitive resin composition on a substrateto form a coated layerthereon. The resist patternand the coated layerare heat-treated to form a developer-insoluble modified coated layerin the vicinity of a surface of the resist pattern. The coated layer is developed and the resist pattern thickened by the modified layeris formed. The modified layer is a layer with sufficient thickness and is able to be formed with a high dimensional controllability in a highly water-repellant resist pattern such as ArF-responsive radiation sensitive resin composition. As a result, a separation size and a hole aperture size of the resist pattern are reduced effectively to less than a limit resolution. As the modified layerhas a function of a protecting film for the resist pattern upon electron beam irradiation, a size measurement fluctuation of a resist pattern upon electron beam irradiation by a size measuring SEM can be prevented.


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