The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2008
Filed:
Sep. 13, 2004
Jianming Fu, San Jose, CA (US);
Praburam Gopalraja, Sunnyvale, CA (US);
Fusen Chen, Saratoga, CA (US);
John Forster, San Francisco, CA (US);
Jianming Fu, San Jose, CA (US);
Praburam Gopalraja, Sunnyvale, CA (US);
Fusen Chen, Saratoga, CA (US);
John Forster, San Francisco, CA (US);
Other;
Abstract
A sputtering process and magnetron especially advantageous for low-pressure plasma sputtering or sustained self-sputtering, in which the magnetron has a reduced area but full target coverage. The magnetron includes an outer pole face surrounding an inner pole face with a gap therebetween. The outer pole of the magnetron of the invention is smaller than that of a circular magnetron similarly extending from the center to the periphery of the target and has a substantially larger total magnetic intensity. Thereby, sputtering at low pressure and high ionization fraction is enabled.