The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2008
Filed:
Jul. 07, 2004
Applicants:
Min LI, Dublin, CA (US);
Cheng T. Horng, San Jose, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Yue Liu, Fremont, CA (US);
Yu-hsia Chen, San Jose, CA (US);
Ru-ying Tong, San Jose, CA (US);
Inventors:
Min Li, Dublin, CA (US);
Cheng T. Horng, San Jose, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Yue Liu, Fremont, CA (US);
Yu-Hsia Chen, San Jose, CA (US);
Ru-Ying Tong, San Jose, CA (US);
Assignee:
Headway Technologies, Inc., Milpitas, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/187 (2006.01); B05D 5/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabling a reduced shield-to-shield spacing.