The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Aug. 21, 2006
Shoji Ikuhara, Hikari, JP;
Hideyuki Yamamoto, Kudamatsu, JP;
Daisuke Shiraishi, Hikari, JP;
Akira Kagoshima, Kudamatsu, JP;
Shoji Ikuhara, Hikari, JP;
Hideyuki Yamamoto, Kudamatsu, JP;
Daisuke Shiraishi, Hikari, JP;
Akira Kagoshima, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanismandfor chucking a sample, a mechanismandfor supplying cooling gasto a rear surface of the sampleand controlling the pressure thereof, and a means for measuring the relative force of electrostatic chuck of the sample based on the rear surface pressure control status of the samplebeing processed, wherein the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control of the samplewhen high-frequency bias power is applied to the samplebeing processed, and the relative force of electrostatic chuck of the sample and the electrostatic chuck voltage corresponding to the force of electrostatic chuck are acquired based on the rear surface pressure control status of the sample when high-frequency bias power is not applied to the sample being processed, and the self-bias voltage is estimated using the acquired forces of electrostatic chuck and the electrostatic chuck voltages corresponding to the two statuses.