The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Jul. 25, 2002
Vi Vuong, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Junwei Bao, Fremont, CA (US);
Srinivas Doddi, Fremont, CA (US);
Xinhui Niu, Los Altos, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Vi Vuong, Fremont, CA (US);
Emmanuel Drege, San Jose, CA (US);
Junwei Bao, Fremont, CA (US);
Srinivas Doddi, Fremont, CA (US);
Xinhui Niu, Los Altos, CA (US);
Nickhil Jakatdar, Los Altos, CA (US);
Timbre Technologies, Inc., Santa Clara, CA (US);
Abstract
A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.