The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2008
Filed:
Feb. 21, 2006
Applicants:
Che-hung Liu, Yongkang, TW;
Po-lun Cheng, Fongshan, TW;
Hwei-lin Chuang, Pitou Township, Changhua County, TW;
Chun-an Lin, Kengzaiping, TW;
Inventors:
Che-Hung Liu, Yongkang, TW;
Po-Lun Cheng, Fongshan, TW;
Hwei-Lin Chuang, Pitou Township, Changhua County, TW;
Chun-An Lin, Kengzaiping, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming a silicon-containing film is described. A substrate is placed in a reaction chamber, and then a silicon-containing gas is introduced into the reaction chamber to conduct a CVD process and deposit a silicon-containing film on the substrate. During the CVD process, the temperature of at least the top inner surface of the reaction chamber is controlled below 50° C.