The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Jun. 14, 2005
Mark G. Stinson, East Alton, IL (US);
Henry F. Erk, St. Louis, MO (US);
Guoqiang (David) Zhang, Ballwin, MO (US);
Mick Bjelopavlic, O'Fallon, MO (US);
Alexis Grabbe, St. Charles, MO (US);
Jozef G. Vermeire, St. Charles, MO (US);
Judith A. Schmidt, St. Peters, MO (US);
Thomas E. Doane, Troy, MO (US);
James R. Capstick, Florissant, MO (US);
Mark G. Stinson, East Alton, IL (US);
Henry F. Erk, St. Louis, MO (US);
Guoqiang (David) Zhang, Ballwin, MO (US);
Mick Bjelopavlic, O'Fallon, MO (US);
Alexis Grabbe, St. Charles, MO (US);
Jozef G. Vermeire, St. Charles, MO (US);
Judith A. Schmidt, St. Peters, MO (US);
Thomas E. Doane, Troy, MO (US);
James R. Capstick, Florissant, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile