The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Jan. 25, 2006
Hyung-suk Jung, Suwon-si, KR;
Jong-ho Lee, Suwon-si, KR;
Jae-eon Park, Yongsin-si, KR;
Sung-kee Han, Seongnam-si, KR;
Min-joo Kim, Anyang-si, KR;
Hyung-suk Jung, Suwon-si, KR;
Jong-ho Lee, Suwon-si, KR;
Jae-eon Park, Yongsin-si, KR;
Sung-kee Han, Seongnam-si, KR;
Min-joo Kim, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device including a high-k dielectric for as a gate insulating layer is provided. The method includes forming a high-k dielectric layer and a conductive layer on a substrate, dry etching a portion of the conductive layer, performing a process to increase a wet etch rate of a remaining portion of the conductive layer, and forming a conductive layer pattern by wet etching the remaining portion of the conductive layer after performing the plasma process or the ion implantation. The process to increase the wet etch rate of the conductive layer including a plasma process and/or an ion implantation on the remaining portion of the conductive layer.