The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Aug. 06, 2004
Guy T. Blalock, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-xuan Ping, Meridian, ID (US);
Shenlin Chen, Boise, ID (US);
Guy T. Blalock, Boise, ID (US);
Lyle D. Breiner, Meridian, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Shenlin Chen, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention encompasses a method of forming a rugged silicon-containing surface. A layer comprising amorphous silicon is provided within a reaction chamber at a first temperature. The temperature is increased to a second temperature at least 40° C. higher than the first temperature while flowing at least one hydrogen isotope into the chamber. After the temperature reaches the second temperature, the layer is seeded with seed crystals. The seeded layer is then annealed to form a rugged silicon-containing surface. The rugged silicon-containing surface can be incorporated into a capacitor construction. The capacitor construction can be incorporated into a DRAM cell, and the DRAM cell can be utilized in an electronic system.