The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Mar. 22, 2005
Chih-hao Wang, Hsin-Chu, TW;
Ta-wei Wang, Taipei, TW;
Chih-Hao Wang, Hsin-Chu, TW;
Ta-Wei Wang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of making an integrated circuit chip is provided, which combines a smart grading implant with a diffusion retarding implant, e.g., to improve short channel effect controllability and improve dopant grading in the source/drain regions. Using a smart grading implant, a relatively low-energy high-dose implant is performed before a relatively low-energy high-dose implant. Hence, a relatively high-energy low-dose implant of ions is performed into a source/drain region of a substrate. A diffusion retarding implant is performed into the source/drain region of the substrate. Then after performing the high-energy low-dose implant and the diffusion retarding implant (together, overlapping, or separately), a relatively low-energy high-dose implant of ions is performed into the source/drain region of the substrate.