The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jul. 14, 2004
Chien-hao Chen, Jhuangwei Township, Yilan County, TW;
Ju-wang Hsu, Taipei, TW;
Chia-lin Chen, Hsinchu, TW;
Tze-liang Lee, Hsinchu, TW;
Shih-chang Chen, Hsin-chu, TW;
Chien-Hao Chen, Jhuangwei Township, Yilan County, TW;
Ju-Wang Hsu, Taipei, TW;
Chia-Lin Chen, Hsinchu, TW;
Tze-Liang Lee, Hsinchu, TW;
Shih-Chang Chen, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for forming a resist protect layer on a semiconductor substrate includes the following steps. An isolation structure is formed on the semiconductor substrate. An original nitride layer having a substantial etch selectivity to the isolation structure is formed over the semiconductor substrate. A photoresist mask is formed for partially covering the original nitride layer. A wet etching is performed to remove the original nitride layer uncovered by the photoresist mask in such a way without causing substantial damage to the isolation structure. As such, the original nitride layer covered by the photoresist mask constitutes the resist protect layer.