The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2008
Filed:
Jun. 21, 2005
Stephen R. Hooper, Mesa, AZ (US);
Hemant D. Desai, Gilbert, AZ (US);
William G. Mcdonald, Scottsdale, AZ (US);
Arvind S. Salian, Chandler, AZ (US);
Stephen R. Hooper, Mesa, AZ (US);
Hemant D. Desai, Gilbert, AZ (US);
William G. McDonald, Scottsdale, AZ (US);
Arvind S. Salian, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A MEMS device () is provided that includes a handle layer () having a sidewall (), a cap () overlying said handle layer (), said cap () having a sidewall (), and a conductive material () disposed on at least a portion of said sidewall of said cap () and said sidewall of said handle layer () to thereby electrically couple said handle layer () to said cap (). A wafer-level method for manufacturing the MEMS device from a substrate () comprising a handle layer () and a cap () overlying the handle layer () is also provided. The method includes making a first cut through the cap () and at least a portion of the substrate () to form a first sidewall (), and depositing a conductive material () onto the first sidewall () to electrically couple the cap () to the substrate ().