The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2008

Filed:

Mar. 05, 2002
Applicants:

John Commander, Old Saybrook, CT (US);

Richard Hurtubise, Clinton, CT (US);

Vincent Paneccasio, Madison, CT (US);

Xuan Lin, New Haven, CT (US);

Kshama Jirage, Branford, CT (US);

Inventors:

John Commander, Old Saybrook, CT (US);

Richard Hurtubise, Clinton, CT (US);

Vincent Paneccasio, Madison, CT (US);

Xuan Lin, New Haven, CT (US);

Kshama Jirage, Branford, CT (US);

Assignee:

Enthone Inc., West Haven, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25D 5/02 (2006.01); C25D 3/38 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.


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