The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2008
Filed:
Dec. 15, 2005
Kiyoshi Mitani, Gunma, JP;
Kiyoshi Demizu, Tokyo, JP;
Isao Yokokawa, Gunma, JP;
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Kiyoshi Mitani, Gunma, JP;
Kiyoshi Demizu, Tokyo, JP;
Isao Yokokawa, Gunma, JP;
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.