The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2007
Filed:
Oct. 13, 2004
Yong-kyun Ko, Gyeonggi-do, KR;
Sang-mun Chon, Gyeonggi-do, KR;
In-hoi Doh, Gyeonggi-do, KR;
Pil-kwon Jun, Gyeonggi-do, KR;
Sang-mi Lee, Gyeonggi-do, KR;
Kwang-shin Lim, Gyeonggi-do, KR;
Myoung-ok Han, Gyeonggi-do, KR;
Yong-Kyun Ko, Gyeonggi-do, KR;
Sang-Mun Chon, Gyeonggi-do, KR;
In-Hoi Doh, Gyeonggi-do, KR;
Pil-Kwon Jun, Gyeonggi-do, KR;
Sang-Mi Lee, Gyeonggi-do, KR;
Kwang-shin Lim, Gyeonggi-do, KR;
Myoung-Ok Han, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.