The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
Nov. 12, 2003
Hee Yeop Chae, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Yan YE, Saratoga, CA (US);
Hee Yeop Chae, San Jose, CA (US);
Jeremiah T. P. Pender, San Jose, CA (US);
Gerardo A. Delgadino, Santa Clara, CA (US);
Xiaoye Zhao, Mountain View, CA (US);
Yan Ye, Saratoga, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process of selectively etching a sacrificial light absorbing material (SLAM) over a dielectric material, such as carbon doped oxide, on a substrate using a plasma of a gas mixture in a plasma etch chamber. The gas mixture comprises a hydrofluorocarbon gas, an optional hydrogen-containing gas, an optional fluorine-rich fluorocarbon gas, a nitrogen gas, an oxygen gas, and an inert gas. The process could provide a SLAM to a dielectric material etching selectivity ratio greater than 10:1.