The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Apr. 30, 2004
Nui Chong, San Jose, CA (US);
Farrokh Omid-zohoor, San Jose, CA (US);
Nui Chong, San Jose, CA (US);
Farrokh Omid-Zohoor, San Jose, CA (US);
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Abstract
A high-voltage circuit protection device includes a p-n junction in a semiconductor substrate that is spaced apart from a first electrode region by a diode region. A semiconductor layer overlies the diode region and is separated therefrom by a dielectric layer. A shallow-doped region resides in the diode region spaced apart from the p-n junction by a predetermined distance. The predetermined distance preferably ranges from about 0 to about 50% of the length of the diode region. A process for fabricating the high-voltage device includes forming the shallow-doped region using a threshold adjustment mask followed by formation of the first electrode region using the semiconductor layer in a self-aligned doping process. The shallow-doped region functions to reduce the clamping voltage of the device.