The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
May. 26, 2005
Applicants:
Toshiaki Iwamatsu, Tokyo, JP;
Yuuichi Hirano, Tokyo, JP;
Takashi Ipposhi, Tokyo, JP;
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 27/12 (2006.01); H01L 31/0392 (2006.01);
U.S. Cl.
CPC ...
Abstract
A partial isolation insulating film provided between MOS transistors in an NMOS region and a PMOS region, respectively, has a structure in which a portion protruding upward from a main surface of an SOI layer is of greater thickness than a trench depth, namely, a portion (isolation portion) extending below the surface of the SOI layer, and the SOI layer under the partial isolation insulating film is of greater thickness than the isolation portion.
Iwamatsu, Toshiaki. (2007). Semiconductor device (U.S. Patent No. 7307318). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7307318
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile