The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2007
Filed:
Feb. 25, 2004
Applicants:
Christof Streck, Coswig, DE;
Guido Koerner, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budget in manufacturing sophisticated field effect transistor elements. The etch recipes used enable a controlled removal of material, wherein other device components are not unduly degraded by the oxidation and etch process.