The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Jun. 17, 2004
Jae-hyoung Choi, Gyeonggi-do, KR;
Jung-hee Chung, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Nam-myun Cho, Seoul, KR;
Jeong-sik Choi, Seoul, KR;
Se-hoon OH, Gyeonggi-do, KR;
Dong-kyun Park, Gyeonggi-do, KR;
Jae-hyoung Choi, Gyeonggi-do, KR;
Jung-hee Chung, Seoul, KR;
Cha-young Yoo, Gyeonggi-do, KR;
Nam-myun Cho, Seoul, KR;
Jeong-sik Choi, Seoul, KR;
Se-hoon Oh, Gyeonggi-do, KR;
Dong-kyun Park, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A MIM capacitor can include a doped polysilicon contact plug in an interlayer insulating film. A lower electrode of the MIM capacitor includes a transition metal nitride film is on the doped polysilicon contact plug. A transition metal silicide film is between the doped polysilicon contact plug and the transition metal nitride film.