The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2007
Filed:
Oct. 01, 2003
Ming-fang Wang, Taichung, TW;
Tuo-hung Hou, Chiayi, TW;
Kai-lin Mai, Jhonghe, TW;
Liang-gi Yao, Hsing-chu, TW;
Shih-chang Chen, Hsin-chu, TW;
Ming-Fang Wang, Taichung, TW;
Tuo-Hung Hou, Chiayi, TW;
Kai-Lin Mai, Jhonghe, TW;
Liang-Gi Yao, Hsing-chu, TW;
Shih-Chang Chen, Hsin-chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H, N, O, and NH.