The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 27, 2007

Filed:

Mar. 30, 2004
Applicants:

Nobuo Konishi, Nirasaki, JP;

Takayuki Toshima, Nirasaki, JP;

Takehiko Orii, Nirasaki, JP;

Inventors:

Nobuo Konishi, Nirasaki, JP;

Takayuki Toshima, Nirasaki, JP;

Takehiko Orii, Nirasaki, JP;

Assignee:

Tokyo Electron Limited, Tokyo-To, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); B08B 3/00 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.


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