The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7300532 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 27, 2007

Filed:

Oct. 12, 2005
Applicants:

Koji Hashizume, Kasugai, JP;

Yoshimasa Miyajima, Kasugai, JP;

Norihiko Hatano, Kasugai, JP;

Tetsuji Kadowaki, Kasugai, JP;

Inventors:

Koji Hashizume, Kasugai, JP;

Yoshimasa Miyajima, Kasugai, JP;

Norihiko Hatano, Kasugai, JP;

Tetsuji Kadowaki, Kasugai, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 41/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for bonding a first substrate with a second substrate in a treatment chamber, wherein the treatment chamber accommodates a first holding unit that attracts the first substrate and a second holding unit that attracts the second substrate. The method includes the steps of transporting the first and second substrates as a pair to the treatment chamber; vacuum attracting at least one of the first and second substrates to the associated holding unit by applying an attraction pressure to at least one of the first and second substrates; depressurizing the treatment chamber to a predetermined level; attracting at least one of the substrates by at least one of another holding devices provided in at least one of the holding units after the pressure in the treatment chamber reaches the predetermined vacuum level, and after the pressure in the treatment chamber reaches the predetermined vacuum level, controlling (with a controller) the attraction pressure applied to at least one of the first and second substrates to be substantially equal to the predetermined vacuum level of the treatment chamber.


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