The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Jul. 18, 2005
Applicant:
Chen-hsiung Yang, Taipei Hsien, TW;
Inventor:
Chen-Hsiung Yang, Taipei Hsien, TW;
Assignee:
Touch Micro-System Technology Inc., Yang-Mei, Taoyuan Hsien, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01);
U.S. Cl.
CPC ...
Abstract
First, a device wafer having a substrate layer and a device layer is provided. Then, a first mask pattern is utilized to remove the device layer uncovered by the first mask pattern. Subsequently, a medium layer is formed on the surface of the device wafer, and the medium layer is then bonded to a carrier wafer. Thereafter, a second mask pattern is utilized to remove the substrate layer uncovered by the second mask pattern. Finally, the medium layer is separated from the carrier wafer, the substrate layer is bonded to an extendable film, and the medium layer is then removed.