The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2007
Filed:
Oct. 31, 2003
Hongyu Yue, Plano, TX (US);
Hongyu Yue, Plano, TX (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
The present invention presents a method for detecting an endpoint of an etch process for etching a substrate in plasma processing system () comprising: etching the substrate; measuring at least one endpoint signal; generating at least one filtered endpoint signal by filtering the at least one endpoint signal, wherein the filtering comprises applying a Savitsky Golay filter () to the at least one endpoint signal; and determining () an endpoint of the etch process from the at least one filtered endpoint signal.
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