The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
May. 12, 2005
Jun Wan, Sunnyvale, CA (US);
Jeffrey Lutze, San Jose, CA (US);
Masaaki Higashitani, Cupertinio, CA (US);
Gerrit Jan Hemink, Yokohama, JP;
Ken Oowada, Kanagawa, JP;
Jian Chen, San Jose, CA (US);
Geoffrey S. Gongwer, Los Altos, CA (US);
Jun Wan, Sunnyvale, CA (US);
Jeffrey Lutze, San Jose, CA (US);
Masaaki Higashitani, Cupertinio, CA (US);
Gerrit Jan Hemink, Yokohama, JP;
Ken Oowada, Kanagawa, JP;
Jian Chen, San Jose, CA (US);
Geoffrey S. Gongwer, Los Altos, CA (US);
SanDisk Corporation, Milpitas, CA (US);
Abstract
A non-volatile memory system is programmed so as to reduce or avoid program disturb. In accordance with one embodiment, multiple program inhibit schemes are employed for a single non-volatile memory system. Program inhibit schemes are selected based on the word line being programmed. Certain program inhibit schemes have been discovered to better minimize or eliminate program disturb at select word lines. In one embodiment, selecting a program inhibit scheme includes selecting a program voltage pulse ramp rate. Different ramp rates have been discovered to better minimize program disturb when applied to select word lines. In another embodiment, the temperature of a memory system is detected before or during a program operation. A program inhibit scheme can be selected based on the temperature of the system.