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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7294935 B1

PDFFull Text
Date of Patent:
Nov. 13, 2007

Filed:

Jan. 24, 2001

Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide

Applicants:

Lap-wai Chow, South Pasadena, CA (US);

James P. Baukus, Westlake Village, CA (US);

William M. Clark, Jr., Camarillo, CA (US);

Inventors:

Lap-Wai Chow, South Pasadena, CA (US);

James P. Baukus, Westlake Village, CA (US);

William M. Clark, Jr., Camarillo, CA (US);

Assignee:

HRL Laboratories, LLC, Malibu, CA (US);

Attorney:

Ladas & Parry

Primary Examiner:

Jerome Jackson

Assistant Examiner:

Joseph Nguyen

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

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Chow, Lap-Wai. (2007). Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide (U.S. Patent No. 7294935). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7294935

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