The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Mar. 24, 2006
M. Ziaul Karim, San Jose, CA (US);
Dongqing LI, Santa Clara, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Thanh N. Pham, San Jose, CA (US);
M. Ziaul Karim, San Jose, CA (US);
DongQing Li, Santa Clara, CA (US);
Jeong Soo Byun, Cupertino, CA (US);
Thanh N. Pham, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10ions/cmis formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.