The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Dec. 23, 2004
Ron Rulkens, Milpitas, CA (US);
George D. Papasouliotis, Sunnyvale, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Raihan M. Tarafdar, San Jose, CA (US);
Bunsen Nie, Fremont, CA (US);
Adrianne K. Tipton, Pleasanton, CA (US);
Jeff Tobin, Mountain View, CA (US);
Ron Rulkens, Milpitas, CA (US);
George D. Papasouliotis, Sunnyvale, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Raihan M. Tarafdar, San Jose, CA (US);
Bunsen Nie, Fremont, CA (US);
Adrianne K. Tipton, Pleasanton, CA (US);
Jeff Tobin, Mountain View, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in the dielectric film can be avoided, if desired. Seams and voids are therefore avoided in gaps filled more efficiently with higher quality dielectric. In addition, the films as dense as deposited, reducing or eliminating the need for post-deposition processing (e.g., annealing).