The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 2007

Filed:

Jul. 20, 2005
Applicants:

Hajime Tsuchiya, Kumamoto, JP;

Seitaro Hattori, Tsukuha, JP;

Masahiro Akiyama, Tsukuba, JP;

Atsushi Shiota, Sunnyvale, CA (US);

Inventors:

Hajime Tsuchiya, Kumamoto, JP;

Seitaro Hattori, Tsukuha, JP;

Masahiro Akiyama, Tsukuba, JP;

Atsushi Shiota, Sunnyvale, CA (US);

Assignee:

JSR Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a silica-based film includes: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet radiation, to a substrate to form a coating; heating the coating; and applying heat and ultraviolet radiation to the coating to effect a curing treatment. The composition includes: a hydrolysis-condensation product produced by hydrolysis and condensation of at least one silane compound selected from the group consisting of compounds shown by the following general formula (A), and at least one silane compound selected from the group consisting of compounds shown by the following general formula (B) and compounds shown by the following general formula (C); and an organic solvent,


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