The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2007
Filed:
Jan. 05, 2007
Wei-sheng Chia, Hsinchu, TW;
Chih-jung Chen, Taipei, TW;
Chung-an Chen, Taichung, TW;
Chih-chung Huang, Hsinchu County, TW;
Wei-Sheng Chia, Hsinchu, TW;
Chih-Jung Chen, Taipei, TW;
Chung-An Chen, Taichung, TW;
Chih-Chung Huang, Hsinchu County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A first film layer is formed over a substrate. A portion of the first film layer is removed to form a first alignment mark pattern and a first conductive layer is formed to fill the first alignment mark pattern to form a first alignment mark. A second film layer is formed and a portion of the second film layer is removed to form openings and to form a second alignment mark pattern. A second conductive layer is formed to fill the openings to form first conductive wires and to fill the second alignment mark pattern to form a second alignment mark. A third film layer and a hard mask layer are formed over the second film layer and a portion of the hard mask layer and the third film layer is removed to form via openings. A third conductive layer is formed in the via openings.