The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 30, 2007

Filed:

Sep. 17, 2003
Applicants:

Yutaka Ohmoto, Hikari, JP;

Hironobu Kawahara, Kudamatsu, JP;

Ken Yoshioka, Hikari, JP;

Kazue Takahashi, Kudamatsu, JP;

Saburou Kanai, Hikari, JP;

Inventors:

Yutaka Ohmoto, Hikari, JP;

Hironobu Kawahara, Kudamatsu, JP;

Ken Yoshioka, Hikari, JP;

Kazue Takahashi, Kudamatsu, JP;

Saburou Kanai, Hikari, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.


Find Patent Forward Citations

Loading…