The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Dec. 10, 2002
Nobuhito Toyama, Tokyo, JP;
Yasutaka Morikawa, Tokyo, JP;
Kei Mesuda, Tokyo, JP;
Dai Nippon Printing Co., Ltd., Tokyo, JP;
Abstract
A planar pattern (), having a plurality of apertures of the same size (Wx×Wy), is determined by a two-dimensional layout determination tool (), and a three-dimensional structure, having a depth d and an undercut amount Uc for making the phase of the transmitted light be shifted by 180 degrees with every even-numbered aperture, is determined by a three-dimensional structure determination tool (). Simulation of transmitted light is executed for a structural body having the planar pattern () and the three-dimensional structure () by a three-dimensional simulator () to determine the light intensity deviation D of transmitted light for an odd-numbered aperture without a trench and an even-numbered aperture with a trench. At a two-dimensional simulator (), simulations using a two-dimensional model prepared based on this deviation D are performed to determine a correction amount δ for making the deviation D zero and obtain a new planar pattern (). The work load spent on designing a trench-type, Levenson-type phase shift mask can be lightened and the working time for the designing process can be shortened.