The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Apr. 07, 2003
Hajime Nagano, Yokohama, JP;
Shinichi Nitta, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Tsutomu Sato, Yokohama, JP;
Katsujiro Tanzawa, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Hajime Nagano, Yokohama, JP;
Shinichi Nitta, Yokohama, JP;
Takashi Yamada, Ebina, JP;
Tsutomu Sato, Yokohama, JP;
Katsujiro Tanzawa, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.