The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 23, 2007

Filed:

Jan. 27, 2005
Applicants:

Douglas D. Coolbaugh, Essex Junction, VT (US);

John E. Florkey, Pleasant Valley, NY (US);

Robert M. Rassel, Colchester, VT (US);

Inventors:

Douglas D. Coolbaugh, Essex Junction, VT (US);

John E. Florkey, Pleasant Valley, NY (US);

Robert M. Rassel, Colchester, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8222 (2006.01);
U.S. Cl.
CPC ...
Abstract

Various methods of fabricating a high precision, silicon-containing resistor in which the resistor is formed as a discrete device integrated in complementary metal oxide semiconductor (CMOS) processing utilizing low temperature silicidation are provided. In some embodiments, the Si-containing layer is implanted with a high dose of ions prior to activation. The activation can be performed by the deposition of a protective dielectric layer, or a separate activation anneal. In another embodiment, a highly doped in-situ Si-containing layer is used thus eliminating the need for implanting into the Si-containing layer.


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