The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2007
Filed:
Nov. 18, 2003
Yi-nan Chen, Taipei, TW;
Jeng-ping Lin, Taoyuan, TW;
Chih-ching Lin, Taoyuan, TW;
Hui-min Mao, Taipei, TW;
Yi-Nan Chen, Taipei, TW;
Jeng-Ping Lin, Taoyuan, TW;
Chih-Ching Lin, Taoyuan, TW;
Hui-Min Mao, Taipei, TW;
Nanya Technology Corporation, Taoyuan, TW;
Abstract
A fabrication method for a damascene bit line contact plug. A semiconductor substrate has a first gate conductive structure, a second gate conductive structure and a source/drain region formed therebetween. A first conductive layer is formed in a space between the first gate conductive structure and the second gate conductive structure to be electrically connected to the source/drain region. An inter-layer dielectric with a planarized surface is formed to cover the first conductive layer, the first gate conductive structure, and the second gate conductive structure. A bit line contact hole is formed in the inter-layer dielectric to expose the top of the first conductive layer. A second conductive layer is formed in the bit line contact hole, in which the combination of the second conductive layer and the first conductive layer serves as a damascene bit line contact plug.