The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Mar. 24, 2004
Fredrick B. Jenne, Los Gatos, CA (US);
Eugene Y. Chen, Fremont, CA (US);
Thomas M. Mnich, Woodland Park, CO (US);
William L. Stevenson, Redwood City, CA (US);
Fredrick B. Jenne, Los Gatos, CA (US);
Eugene Y. Chen, Fremont, CA (US);
Thomas M. Mnich, Woodland Park, CO (US);
William L. Stevenson, Redwood City, CA (US);
Silicon Magnetic Systems, San Jose, CA (US);
Abstract
An MRAM device is provided which includes an array of magnetic elements, a plurality of conductive lines configured to set magnetization states of the magnetic elements and circuitry configured to vary current applications along one or more of the conductive lines. In some cases, the MRAM device may additionally or alternatively include circuitry which is configured to terminate an application of current along one or more of the conductive lines before magnetization states of one or more magnetic elements selected for a write operation of the device are changed. In either case, a device is provided which includes an MRAM array and a first storage circuit comprising one or more magnetic elements, wherein the first storage circuit is configured to store parameter settings characterizing operations of the magnetic random access memory array within the magnetic elements. Methods for operating the devices provided herein are contemplated as well.