The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2007
Filed:
Dec. 06, 2004
Kazumasa Tanida, Kyoto, JP;
Mitsuo Umemoto, Moriguchi, JP;
Yoshihiko Nemoto, Tokyo, JP;
Kenji Takahashi, Ibaraki, JP;
Kazumasa Tanida, Kyoto, JP;
Mitsuo Umemoto, Moriguchi, JP;
Yoshihiko Nemoto, Tokyo, JP;
Kenji Takahashi, Ibaraki, JP;
Rohm Co., Ltd., Kyoto, JP;
Renesas Technology Corp., Tokyo, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
The invention provides a semiconductor chip manufacturing method including the steps of: forming a concave portion extended in the thickness direction of a semiconductor substrate which has a front surface and a rear surface and has a function device formed on the front surface, from the front surface; forming an oxidation preventive film made of an inert first metal material by supplying the first metal material onto the inner wall surface of the concave portion; supplying a second metal material containing a metal which is oxidized more easily than the first metal material to the inside of the concave portion after the step of forming the oxidation preventive film; electrically connecting the second metal material supplied to the inside of the concave portion and the function device; and thinning the semiconductor substrate so that the thickness thereof becomes thinner than the depth of the concave portion by removing the semiconductor substrate from the rear surface while leaving the oxidation preventive film.